The Effects of Silicon Dioxide Priming on Some Germination and Vegetative Growth Parameters of Rocket Cultivars Under Salt Stress Conditions

Ayşe Gül Nasırcılar & Kamile Ulukapı

doi:https://doi.org/10.29329/ijiaar.2023.568.1

Original article | Open Access
International Journal of Innovative Approaches in Agricultural Research 2023, Vol. 7(2) 157-168

The Effects of Silicon Dioxide Priming on Some Germination and Vegetative Growth Parameters of Rocket Cultivars Under Salt Stress Conditions

Ayşe Gül Nasırcılar & Kamile Ulukapı

pp. 157 - 168 | DOI: https://doi.org/10.29329/ijiaar.2023.568.1

Published online: June 29, 2023 | Number of Views: 69 | Number of Download: 338

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Abstract

Rocket (Eruca vesicaria), a plant from the cruciferous (Brassicaceae) family, whose leaves are eaten as a salad, is also considered a medicinal plant due to its different therapeutic properties. In this study, the effects of silicon dioxide priming (0.5, 1, 1.5 mM SiO2) on the germination and vegetative growth properties of two different rocket cultivars (Geniş Yaprak, Eda) were investigated under increased salt stress conditions (150, 200 mM NaCl). For this purpose, germination percentage (GP), germination index (GI), germination rate coefficient (CVG), mean germination time (MGT) germination rate index (GRI) were calculated as germination parameters. Shoot and root length (mm), leaf width and length (mm), plant fresh weight (g) were measured in seedlings developed from germinated seeds, and seedling vigour index (SVI) was calculated. The effects of SiO2 priming on germination and vegetative growth differed according to the cultivar. In Geniş Yaprak cv., 1 mM SiO2 application had a positive effect on germination parameters both in seeds not applied salt stress and under 150 mM salt stress, and increased the germination rate from 30% to 73%, especially in salty conditions. Under 200 mM salt stress, 1.5 mM SiO2 had a positive effect on germination parameters in same cultivar. Although SiO2 applications in Eda cv. were not effective on germination parameters under stress-free conditions, they had a positive effect on vegetative parameters. Especially, 1.5 mM application dose increased SVI, root and shoot length and plant fresh weight. In both salt concentrations, 1 mM application dose made a slight improvement in germination parameters of Eda cv. The positive effects of SiO2 applications on vegetative growth parameters such as leaves, roots and shoots were determined at different doses for both salt concentrations.

Keywords: Germination, Priming, Rocket, Salt Stress, Silicon Dioxide

How to Cite this Article

APA 6th edition
Nasircilar, A.G. & Ulukapi, K. (2023). The Effects of Silicon Dioxide Priming on Some Germination and Vegetative Growth Parameters of Rocket Cultivars Under Salt Stress Conditions . International Journal of Innovative Approaches in Agricultural Research, 7(2), 157-168. doi: 10.29329/ijiaar.2023.568.1

Harvard
Nasircilar, A. and Ulukapi, K. (2023). The Effects of Silicon Dioxide Priming on Some Germination and Vegetative Growth Parameters of Rocket Cultivars Under Salt Stress Conditions . International Journal of Innovative Approaches in Agricultural Research, 7(2), pp. 157-168.

Chicago 16th edition
Nasircilar, Ayse Gul and Kamile Ulukapi (2023). "The Effects of Silicon Dioxide Priming on Some Germination and Vegetative Growth Parameters of Rocket Cultivars Under Salt Stress Conditions ". International Journal of Innovative Approaches in Agricultural Research 7 (2):157-168. doi:10.29329/ijiaar.2023.568.1.

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